ME70N06T

ME70N06T /ME70N06T-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME70N06T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-220) Top View FEATURES ● RDS(ON)≦12mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter * The Ordering Information: ME70N06/ME70N06T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted...