ME60N03S/ME60N03S-G
30V N-Channel Enhancement Mode MOSFET
VDS=30V RDS(ON), Vgs@10V,Ids@30A ≦ 10mΩ RDS(ON), Vgs@4.5V,Ids@15A ≦18.5mΩ
FEATURES
Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for High-side switching of PWM application.
PIN CONFIGURATION (TO-252)
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APPLICATIONS
● Motherboard (V-...
