ME60N03S/ME60N03S-G
30V N-Channel Enhancement Mode MOSFET
VDS=30V RDS(ON), Vgs@10V,Ids@30A ≦ 10mΩ RDS(ON), [email protected],Ids...
ME60N03S/ME60N03S-G
30V N-Channel Enhancement Mode
MOSFET
VDS=30V RDS(ON), Vgs@10V,Ids@30A ≦ 10mΩ RDS(ON),
[email protected],Ids@15A ≦18.5mΩ
FEATURES
Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for High-side switching of PWM application.
PIN CONFIGURATION (TO-252)
Top View
APPLICATIONS
● Motherboard (V-Core) ● Portable Equipment ● DC/DC Converter ● Load Switch ● LCD Display inverter ● IPC
e Ordering Information: ME60N03S (Pb-free)
ME60N03S-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
TC=25℃
Continuous Drain Current*
TC=70℃ TA=25℃
TA=70℃
Pulsed Drain Current
TC=25℃
Maximum Power Dissipation*
TC=70℃ TA=25℃
TA=70℃
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
*The device mounted on 1in2 FR4 board with 2 oz copper...
