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ME60N03-G

Part Number	ME60N03-G
Manufacturer	Matsuki
Description	30V N-Channel Enhancement Mode MOSFET
Published	Apr 3, 2018
Detailed Description	ME60N03/ME60N03-G -g30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME60N03 is the N-Channel logic enhanc...
Datasheet	ME60N03-G PDF File

Overview

ME60N03/ME60N03-G -g30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME60N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss.
FEATURES ● RDS(ON)≦8.
5mΩ@VGS=10V ● RDS(ON)≦13mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● D...

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