N-Channel 100-V (D-S) MOSFET
ME50N10T/ME50N10T-G
GENERAL DESCRIPTION
The ME50N10T is the N-Channel logic enhancement m...
N-Channel 100-V (D-S)
MOSFET
ME50N10T/ME50N10T-G
GENERAL DESCRIPTION
The ME50N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
● RDS(ON)≦30mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
PIN CONFIGURATION
(TO-220) Top View
* The Ordering Information: ME50N10T (Pb-free) ME50N10T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current Pulsed Drain Currenta
Tc=25℃ TC=70℃
Power Dissipation
TC=25℃ TC=70℃
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Case...
