ME50N10AT /ME50N10AT-G
N- Channel 100V (D-S) MOSFET
GENERAL DESCRIPTION
The ME50N10AT-G is the N-Channel logic enhance...
ME50N10AT /ME50N10AT-G
N- Channel 100V (D-S)
MOSFET
GENERAL DESCRIPTION
The ME50N10AT-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦40mΩ@VGS=10V ● RDS(ON)≦60mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
(TO-220) Top View
* The Ordering Information: ME50N10AT /ME50N10AT-G (Green product-Halogen free)
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