N- Channel 100-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME50N10 is the N-Channel logic enhancement mode power field effect...
N- Channel 100-V (D-S)
MOSFET
GENERAL DESCRIPTION
The ME50N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(TO-252-3L) Top View
ME50N10 / ME50N10-G
FEATURES
● RDS(ON)≦17mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management ● DC/DC Converter ● Load Switch
Ordering Information: ME50N10 (Pb-free) ME50N10-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drai...
