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ME50N02 Datasheet

Part Number ME50N02
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME50N02 DatasheetME50N02 Datasheet (PDF)

N- Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The ME50N02 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are need.

  ME50N02   ME50N02






Part Number ME50N08-G
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME50N02 DatasheetME50N08-G Datasheet (PDF)

N- Channel 80V (D-S) MOSFET GENERAL DESCRIPTION The ME50N08 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are need.

  ME50N02   ME50N02







Part Number ME50N08
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME50N02 DatasheetME50N08 Datasheet (PDF)

N- Channel 80V (D-S) MOSFET GENERAL DESCRIPTION The ME50N08 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are need.

  ME50N02   ME50N02







Part Number ME50N06T-G
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME50N02 DatasheetME50N06T-G Datasheet (PDF)

N-Channel 60-V (D-S) MOSFET ME50N06T/ME50N06T-G GENERAL DESCRIPTION The ME50N06T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦22mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converte.

  ME50N02   ME50N02







Part Number ME50N06T
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME50N02 DatasheetME50N06T Datasheet (PDF)

N-Channel 60-V (D-S) MOSFET ME50N06T/ME50N06T-G GENERAL DESCRIPTION The ME50N06T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦22mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converte.

  ME50N02   ME50N02







Part Number ME50N06A-G
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME50N02 DatasheetME50N06A-G Datasheet (PDF)

N- Channel 60V (D-S) MOSFET ME50N06A/ME50N06A-G GENERAL DESCRIPTION The ME50N06A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss. PIN CONFIGURATION (TO-.

  ME50N02   ME50N02







N-Channel MOSFET

N- Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The ME50N02 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-252-3L) Top View ME50N02 / ME50N02-G FEATURES ● RDS(ON)≦8mΩ@VGS=10V ● RDS(ON)≦9mΩ@VGS=4.5V ● RDS(ON)≦12mΩ@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter Ordering Information: ME50N02 (Pb-free) ME50N02-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ .


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