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ME4956-G

Part Number	ME4956-G
Manufacturer	Matsuki
Description	N- & P-Channel MOSFET
Published	Mar 22, 2018
Detailed Description	N- and P-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME4956 is the N- and P-Channel logic enhancement mode power ...
Datasheet	ME4956-G PDF File

Overview

N- and P-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME4956 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION (SOP-8) Top View ME4956/ME4956-G FEATURES ● RDS(ON)≦116mΩ@VGS=10V (N-Ch) ● RDS(ON)≦133mΩ@VGS=4.
5V (N-Ch) ● RDS(ON)≦2...

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