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ME4952 Datasheet

Part Number ME4952
Manufacturers Matsuki
Logo Matsuki
Description Dual N-Channel MOSFET
Datasheet ME4952 DatasheetME4952 Datasheet (PDF)

Dual N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME4952 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss.

  ME4952   ME4952






Part Number ME4956-G
Manufacturers Matsuki
Logo Matsuki
Description N- & P-Channel MOSFET
Datasheet ME4952 DatasheetME4956-G Datasheet (PDF)

N- and P-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME4956 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line powe.

  ME4952   ME4952







Part Number ME4956
Manufacturers Matsuki
Logo Matsuki
Description N- & P-Channel MOSFET
Datasheet ME4952 DatasheetME4956 Datasheet (PDF)

N- and P-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME4956 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line powe.

  ME4952   ME4952







Part Number ME4954-G
Manufacturers Matsuki
Logo Matsuki
Description Dual N-Channel MOSFET
Datasheet ME4952 DatasheetME4954-G Datasheet (PDF)

Dual N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME4954 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very sm.

  ME4952   ME4952







Part Number ME4954
Manufacturers Matsuki
Logo Matsuki
Description Dual N-Channel MOSFET
Datasheet ME4952 DatasheetME4954 Datasheet (PDF)

Dual N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME4954 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very sm.

  ME4952   ME4952







Part Number ME4953-G
Manufacturers Matsuki
Logo Matsuki
Description Dual P-Channel MOSFET
Datasheet ME4952 DatasheetME4953-G Datasheet (PDF)

ME4953/ME4953-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4953 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and low in-line power loss are needed in a very small outline surface mou.

  ME4952   ME4952







Dual N-Channel MOSFET

Dual N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME4952 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4952/ME4952-G FEATURES ● RDS(ON)≦270mΩ@VGS=10V ● RDS(ON)≦295mΩ@VGS=6.0V ● RDS(ON)≦350mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● LCD Display inverter e Or.


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