ME4946

www.DataSheet.co.kr ME4946 Dual N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦41mΩ@VGS=10V ● RDS(ON)≦52mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● LCD TV & Monitor Display inverter ● CCFL inverter PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(Tj=150℃) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation L=0.1mH TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS IAS EAS PD TJ RθJA RθJC 10 secs 60 Steady State ±20 Unit V 6.4 5.1 30 2 15 12 2.7 1.7 -55 to 150 46 43 5 4 A mJ 1.6 1 76 W ℃ ℃/W Operating Junction & Storage Temperature Range Thermal Resistance-Junction to Ambient * Thermal Resistance-Junction to C...