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ME4942 Datasheet

Part Number ME4942
Manufacturers Matsuki
Logo Matsuki
Description Dual N-Channel MOSFET
Datasheet ME4942 DatasheetME4942 Datasheet (PDF)

Dual N-Channel 40-V (D-S) MOSFET ME4942/ME4942-G GENERAL DESCRIPTION The ME4942 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low i.

  ME4942   ME4942






Part Number ME4948-G
Manufacturers Matsuki
Logo Matsuki
Description Dual N-Channel MOSFET
Datasheet ME4942 DatasheetME4948-G Datasheet (PDF)

Dual N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME4948 is the Dual N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline .

  ME4942   ME4942







Part Number ME4948
Manufacturers Matsuki
Logo Matsuki
Description Dual N-Channel MOSFET
Datasheet ME4942 DatasheetME4948 Datasheet (PDF)

Dual N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME4948 is the Dual N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline .

  ME4942   ME4942







Part Number ME4947-G
Manufacturers Matsuki
Logo Matsuki
Description P-Channel MOSFET
Datasheet ME4942 DatasheetME4947-G Datasheet (PDF)

P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME4947 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are need.

  ME4942   ME4942







Part Number ME4947
Manufacturers Matsuki
Logo Matsuki
Description P-Channel MOSFET
Datasheet ME4942 DatasheetME4947 Datasheet (PDF)

P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME4947 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are need.

  ME4942   ME4942







Part Number ME4946
Manufacturers Matsuki
Logo Matsuki
Description Dual N-Channel MOSFET
Datasheet ME4942 DatasheetME4946 Datasheet (PDF)

www.DataSheet.co.kr ME4946 Dual N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching.

  ME4942   ME4942







Dual N-Channel MOSFET

Dual N-Channel 40-V (D-S) MOSFET ME4942/ME4942-G GENERAL DESCRIPTION The ME4942 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View FEATURES ● RDS(ON)≦20mΩ@VGS=10V ● RDS(ON)≦29mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● LCD Display inverter * The Ordering Information: ME4942 (.


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