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ME3205F Datasheet

Part Number ME3205F
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME3205F DatasheetME3205F Datasheet (PDF)

N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME3205F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outlin.

  ME3205F   ME3205F






Part Number ME3205T-G
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME3205F DatasheetME3205T-G Datasheet (PDF)

N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME3205T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed.

  ME3205F   ME3205F







Part Number ME3205T
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME3205F DatasheetME3205T Datasheet (PDF)

N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME3205T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed.

  ME3205F   ME3205F







Part Number ME3205P-G
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME3205F DatasheetME3205P-G Datasheet (PDF)

N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME3205P is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surf.

  ME3205F   ME3205F







Part Number ME3205P
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME3205F DatasheetME3205P Datasheet (PDF)

N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME3205P is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surf.

  ME3205F   ME3205F







Part Number ME3205H-G
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME3205F DatasheetME3205H-G Datasheet (PDF)

N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME3205H-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline su.

  ME3205F   ME3205F







N-Channel MOSFET

N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME3205F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-220F) Top View ME3205F/ME3205F-G FEATURES ● RDS(ON)≦6mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter * TheOrdering Information: ME3205F (Pb-free) ME4 ME3205F-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Drain-Source Vol.


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