ME25N15F

N-Channel 150-V (D-S) MOSFET GENERAL DESCRIPTION The ME25N15F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. PIN CONFIGURATION ME25N15F/ME25N15F-G FEATURES ● RDS(ON)≦75mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-220F) Top View * The Ordering Information: ME25N15F (Pb-free) ME25N15F-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ Symbol VDS VGS ID Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ IDM PD Junction and Storage Temperature Range Thermal Resistance-Junction t...