ME25N10F/ME25N10F-G
N- Channel 100V (D-S) MOSFET
GENERAL DESCRIPTION
The ME25N10F is the N-Channel logic enhancement m...
ME25N10F/ME25N10F-G
N- Channel 100V (D-S)
MOSFET
GENERAL DESCRIPTION
The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦85mΩ@VGS=10V ● RDS(ON)≦105mΩ@VGS=5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
(TO-220F) Top View
* The Ordering Information: ME25N10F (Pb-free) ME25N10F-G (Green product-Halogen free )
Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current
TC=25℃ TC=70℃
Pulsed Drain Current
Maximum Power Dissipation
TC=25℃ TC=70℃
Operating Junction and Storage Temperature Ra...