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ME200N04T-G Datasheet

Part Number ME200N04T-G
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME200N04T-G DatasheetME200N04T-G Datasheet (PDF)

N- Channel 40V (D-S) MOSFET ME200N04T / ME200N04T-G GENERAL DESCRIPTION The ME200N04T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-220) Top View FEATURES ● RDS(ON)≦3.5mΩ@VGS=10V ● RDS(ON)≦4.7mΩ@VGS=5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC cu.

  ME200N04T-G   ME200N04T-G






N-Channel MOSFET

N- Channel 40V (D-S) MOSFET ME200N04T / ME200N04T-G GENERAL DESCRIPTION The ME200N04T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-220) Top View FEATURES ● RDS(ON)≦3.5mΩ@VGS=10V ● RDS(ON)≦4.7mΩ@VGS=5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch e Ordering Information: ME200N04T (Pb-free) ME200N04T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current* TC=25℃ TC=70℃ ID 189 158 A Pulsed Drain Current IDM 755 A Maximum Power Dissipation TC=25℃ TC=70℃ .


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