ME08N20

ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology. This high density process is especi ally tailored to minimize on-state resist ance. These dev ices are p articularly su ited for lo w volt age appl ication su ch as LCD i nverter, compute r po wer management and DC to DC converter circu its which need low in-line power loss. FEATURES ● RDS(ON)≦0.4Ω@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Po wer Management ● DC/DC Converter ● LCD TV & Monitor Display inverter ● CCFL inverter ● Secon dary Synchronous Rectification PIN CONFIGURA TION (TO-252-3L) Top View e Ordering Information: ME08N20 (Pb-free) ME08N20-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Sy Drain-Source Voltage Gate-Source Voltage Continuous Drain Current * Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Thermal Resistance-Junction to Case* 2 mbol VDS 200 VGS ±20 TC=25℃ TC=70℃ ID IDM 36 TC=25℃ TC=70℃ PD TJ RθJC 1.67 Maximum Ratings Unit V V 9 7.2 A A 74.9 47.9 -55 to 150 W ℃ ℃/W * Notes: The device mounted on 1in FR4 board with 2 oz copper http://www.Datasheet4U.com Nov, 2012-Ver1.6 01 ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET Electrical Characteri...