ME06N10

N-Channel 100-V (D-S) MOSFET ME06N10/ME06N10-G GENERAL DESCRIPTION The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦200mΩ@VGS=10V ● RDS(ON)≦260mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-252-3L) Top View Ordering Information: ME06N10 (Pb-free) ME06N10-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current TC=25℃ TC=70℃ ID Pulsed Drain Current IDM Maximum Power Dissipation TC=25℃ TC=70℃ PD Operating Junction and Storage Temperature Range TJ, Tstg Thermal Resistance-Junction to Case* * The device mounted on 1in2 FR4 board with 2 oz copper RθJC Maximum Ratings 100 ±20 7.2 5.7 28.8 16.6 10.6 -55 to 150 7.5 Unit V V A A W ℃ ℃/W Dec, 2013 Ver1.0 01 ME06N10/ME06...