N-Channel 250-V (D-S) MOSFET
ME04N25/ME04N25-G
GENERAL DESCRIPTION
The ME04N25 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very sm.
N-Channel MOSFET
N-Channel 250-V (D-S) MOSFET
ME04N25/ME04N25-G
GENERAL DESCRIPTION
The ME04N25 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
FEATURES
● RDS(ON)≦1.8Ω@VGS=10V ● RDS(ON)≦2.0Ω@VGS=5V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
PIN CONFIGURATION
(TO-252-3L) Top View
e Ordering Information: ME04N25 (Pb-free)
ME04N25-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC=25℃ TC=70℃
ID
Pulsed Drain Current
IDM
Maximum Power Dissipation
TC=25℃ TC=70℃
PD
Operating Junction Temperature
TJ
Thermal Resistance-Junction to Case *
RθJC
* The device mounted on 1in2 FR4 board with 2 oz copper
Maximum Ratings
250 ±20 3.3 2.6 13 31 20 -55 to 150 4.0
Unit V V
A
A
W
℃ ℃/W
Feb,2012,Ver1.1
01
N-Channel 250-V (D-S) MOSFET
ME04N25/ME04N25-G
Electrical Characteristics (TC =.