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MDS9652E
N-P Channel Trench MOSFET
Description
MDS9652E– Complementary N-P Channel Trench
MOSFET
MDS9652E Complementary N-P Channel Trench
MOSFET
General Description The MDS9652E uses advanced MagnaChip’s
MOSFET
Technology to provide low on-state resistance, high switching performance and excellent reliability Features N-Channel VDS = 30V ID = 7.2A @ VGS = 10V RDS(ON) <23m @ VGS = 10V <30m @ ...
MagnaChip
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