MDS5951

www.DataSheet4U.net MDS5951– Dual N-Channel Trench MOSFET MDS5951 Dual N-Channel Trench MOSFET 60V, 4.5A, 50mΩ General Description The MDS5951 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. Features VDS = 60V ID = 4.5A @VGS = 10V RDS(ON) < 50mΩ @ VGS = 10V < 60mΩ @ VGS = 4.5V Applications Inverters General purpose applications 5(D2) 6(D2) 7(D1) 8(D1) D1 D2 2(G1) 1(S1) 4(G2) 3(S2) G1 G2 S1 S2 Absolute Maximum Ratings (TA =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 3) TA=25oC TA=70 C Junction and Storage Temperature Range TJ, Tstg o Symbol VDSS VGSS (Note 4) TA=25 C TA=70 C o o Rating 60 ±20 4.5 3.6 20 2.0 1.28 -55~150 Unit V V A A A W o ID IDM PD Power Dissipation for Single Operation (Note 2) C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (Steady-State) Thermal Resistance, Junction-to-Case (Note 1) Symbol RθJA RθJC Rating 62.5 34.0 Unit o C/W February 2010. Version2.0 1 MagnaChip Semiconductor Ltd. www.DataSheet4U.net MDS5951– Dual N-Channel Trench MOSFET Ordering Information Part Number MDS5951URH Temp. Range -55~150 C o Package SOIC-8 Packing Tape & Reel RoHS Status Halogen Free Electrical Characteristics (TA =25oC unless otherwise noted) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Vo...