MDS5652

MDS5652 – Dual N-Channel Trench MOSFET, 30V, 7.5A, 22mΩ MDS5652 Dual N-Channel Trench MOSFET, 30V, 7.5A, 22mΩ General Description The MDS5652 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and exellent reliability. Features VDS = 30V ID = 7.5A @VGS = 10V RDS(ON) < 22mΩ @VGS = 10V < 35mΩ @VGS = 4.5V Applications Portable Equipment Applications DC-DC Converter applications General purpose applications 6(D2)5(D2) 7(D1) 8(D1) D1 D2 3(S24) (G2) 2(G1) 1(S1) G1 G2 S1 S2 Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current Power Dissipation(1) Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range Ta=25oC Ta=100oC Ta=25oC Ta=100oC Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating 30 ±20 7.5 4.8 30 2.0 0.8 12 -55~+150 Unit V V A A A W mJ oC Thermal Characteristics Characteristic...