MDS1655

MDS1655 – Single N-Channel Trench MOSFET 30V MDS1655 Single N-channel Trench MOSFET 30V, 11A, 17.5mΩ General Description The MDS1655 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1655 is suitable device for DC-DC Converters and general purpose applications. Features VDS = 30V ID = 11A @VGS = 10V R DS(ON) < 17.5mΩ@VGS = 10V < 25.0mΩ@VGS = 4.5V Applications DC-DC Converters 5(D) 6(D) 7(D) 8(D) D 4(G) 3(S) 2(S) 1(S) Absoloute Maximun Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current) (1) Characteristics Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy) (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient) (1) Thermal Resistance, Junction-to-Case G S Ta=25oC Ta=100oC Ta=25oC Ta=100oC Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating 30 ...