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MDS1101 Datasheet

Part Number MDS1101
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDS1101 DatasheetMDS1101 Datasheet (PDF)

MDS1101 – Single N-Channel Trench MOSFET 12V MDS1101 Single N-channel Trench MOSFET 12V, 15A, 8mΩ General Description The MDS1101 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1101 is suitable device for DC/DC Converter and general purpose applications. Features  VDS = 12V  ID = 15A @VGS = 4.5V  RDS(ON) < 8.0 mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 5(D) 6(D) 7(D) 8(D) 4(G.

  MDS1101   MDS1101






Part Number MDS1100
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description 50 Volts Pulsed Avionics at 1030 MHz
Datasheet MDS1101 DatasheetMDS1100 Datasheet (PDF)

www.DataSheet4U.com MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, ex.

  MDS1101   MDS1101







Part Number MDS110
Manufacturers Naina Semiconductor
Logo Naina Semiconductor
Description Three Phase Bridge Rectifier
Datasheet MDS1101 DatasheetMDS110 Datasheet (PDF)

Naina Semiconductor Ltd. MDS110 Three Phase Bridge Rectifier, 110 Amps Features • Easy connections • Excellent power volume ratio • Insulated type Voltage Ratings (TJ = 25oC unless otherwise noted) Type number Voltage code VRRM, Max. repetitive peak reverse voltage VRSM, Max. nonrepetitive peak reverse voltage MDS110 80 100 120 140 160 (V) 800 1000 1200 1400 1600 (V) 900 1100 1300 1500 1700 IRRM max @ TJ max (mA) 10 MDS Electrical Specifications (TJ = 25oC unless otherwise noted) .

  MDS1101   MDS1101







N-Channel MOSFET

MDS1101 – Single N-Channel Trench MOSFET 12V MDS1101 Single N-channel Trench MOSFET 12V, 15A, 8mΩ General Description The MDS1101 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1101 is suitable device for DC/DC Converter and general purpose applications. Features  VDS = 12V  ID = 15A @VGS = 4.5V  RDS(ON) < 8.0 mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) G 8 Leads, SOIC D S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range TA=25oC TA=70oC TA=25oC TA=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Apr. 2016. Ver. 1.0 1 Symbol VDSS VGSS ID IDM .


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