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MDFS11N60 Datasheet

Part Number MDFS11N60
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDFS11N60 DatasheetMDFS11N60 Datasheet (PDF)

MDFS11N60 N-channel MOSFET 600V MDFS11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDFS11N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDFS11N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  ID = 11A  RDS(ON) ≤ 0.55Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching G DS TO-.

  MDFS11N60   MDFS11N60






Part Number MDFS11N65B
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDFS11N60 DatasheetMDFS11N65B Datasheet (PDF)

MDFS11N65B N-channel MOSFET 650V MDFS11N65B N-Channel MOSFET 650V, 12A, 0.65Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 650V  ID = 12A  RDS(ON) ≤ 0.65Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, Hi.

  MDFS11N60   MDFS11N60







N-Channel MOSFET

MDFS11N60 N-channel MOSFET 600V MDFS11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDFS11N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDFS11N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  ID = 11A  RDS(ON) ≤ 0.55Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching G DS TO-220FT Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Juncti.


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