MDF9N50F N-channel MOSFET 500V
MDF9N50F
N-Channel MOSFET 500V, 8.0 A, 0.9Ω
General Description
The MDF9N50F uses advan...
MDF9N50F N-channel
MOSFET 500V
MDF9N50F
N-Channel
MOSFET 500V, 8.0 A, 0.9Ω
General Description
The MDF9N50F uses advanced Magnachip’s
MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDF9N50F is suitable device for SMPS, HID and general purpose applications.
Features
VDS = 500V ID = 8.0A @VGS = 10V RDS(ON) ≤ 0.9Ω @VGS = 10V
Applications
Power Supply HID Lighting
G DS
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source
Voltage Gate-Source
Voltage
Characteristics
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Aug 2011. Version 1.0
1
Symbol VDSS VGSS
ID
IDM
P...