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MDF4N60B Datasheet

Part Number MDF4N60B
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel Trench MOSFET
Datasheet MDF4N60B DatasheetMDF4N60B Datasheet (PDF)

MDF4N60B N-channel MOSFET 600V MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  ID = 4.6A  RDS(ON) ≤ 2.0Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High S.

  MDF4N60B   MDF4N60B






Part Number MDF4N60D
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel Trench MOSFET
Datasheet MDF4N60B DatasheetMDF4N60D Datasheet (PDF)

MDF4N60D N-channel MOSFET 600V MDF4N60D N-Channel MOSFET 600V, 4.0A, 2.2Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V ID = 4.0A RDS(ON) ≤ 2.2Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switchi.

  MDF4N60B   MDF4N60B







Part Number MDF4N60
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDF4N60B DatasheetMDF4N60 Datasheet (PDF)

MDP4N60/MDF4N60 N-channel MOSFET 600V MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  ID = 4.6A  RDS(ON) ≤ 2.0Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High C.

  MDF4N60B   MDF4N60B







N-Channel Trench MOSFET

MDF4N60B N-channel MOSFET 600V MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  ID = 4.6A  RDS(ON) ≤ 2.0Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching D TO-220F MDF Series G Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg .


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