MDF3N50

MDF3N50 N-channel MOSFET 500V MDF3N50 N-Channel MOSFET 500V, 2.8 A, 2.5Ω General Description The MDF3N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF3N50 is suitable device for SMPS, HID and general purpose applications. Features  VDS = 500V  ID = 2.8A  RDS(ON) ≤ 2.5Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  HID  High Current, High Speed Switching GDS Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD dv/dt EAR EAS TJ, Tstg Rating 500 ±30 2.8 1.7 11.2 30.5 0.24 4.5 4.5 170 -55~150 Unit V V A A A W W/ oC V/ns mJ mJ oC Symbol RθJA RθJC Rating 62.5 4.1 Unit oC/W Aug. 2021. Version 1.1 1 Magnachip Semiconductor Ltd. MDF3N50 N-channel MOSFET 500V Ordering Information Part Number MDF3N50 Marking MDF3N50 Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage BVDSS Gate Thresh...