MCR8DCM

www.DataSheet4U.com MCR8DCM, MCR8DCN Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features http://onsemi.com Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Available in Surface Mount Lead Form − Case 369C Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available SCRs 8 AMPERES RMS 600 − 800 VOLTS G A K 4 1 2 Unit V 3 DPAK CASE 369C STYLE 4 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR8DCM MCR8DCN On−State RMS Current (180° Conduction Angles; TC = 105°C) Average On−State Current (180° Conduction Angles; TC = 105°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 msec) Forward Peak Gate Power (Pulse Width ≤ 1.0 msec, TC = 105°C) Forward Average Gate Power (t = 8.3 msec, TC = 105°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 msec, TC = 105°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) IT(AV) ITSM I2t PGM PG(AV) IGM TJ Tstg 8.0 5.1 80 26 5.0 0.5 2.0 −40 to 125 −40 to 150 Value MARKING DIAGRAM A A A2sec W W A °C °C 1 ...