MCR218-2

www.DataSheet4U.com MCR218−2, MCR218−4, MCR218−6 Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. Features http://onsemi.com Glass-Passivated Junctions Blocking Voltage to 400 Volts TO-220 Construction − Low Thermal Resistance, High Heat Dissipation and Durability Pb−Free Packages are Available* SCRs 8 AMPERES RMS 50 thru 400 VOLTS G A C MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = *40 to 125°C, Gate Open) MCR218−2 MCR218−4 MCR218−6 On-State RMS Current (180° Conduction Angles; TC = 70°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 70°C) Forward Average Gate Power (t = 8.3 ms, TC = 70°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 70°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 200 400 IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 8.0 100 26 5.0 0.5 2.0 −40 to +125 −40 to +150 A 1 A A2s W W A °C °C A Y WW MCR218x G AKA 2 3 TO−220AB CASE 221A−07 STYLE 3 Value Unit V 4 MARKING DIAGRAM AY WW MCR218x−G AKA = Assembly Location = Year = Work Week = Device Code x = 2, 4 or 6 = Pb−Free Package = Diode Polarity ORDERIN...