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MCR100-8G Datasheet

Part Number MCR100-8G
Manufacturers First Semiconductor
Logo First Semiconductor
Description SCRs
Datasheet MCR100-8G DatasheetMCR100-8G Datasheet (PDF)

MCR100-8G SCRs Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Features • Blocking voltage to 600 V • On-state RMS current to 0.8 A • Ultra low gate trigger current Simplified outline TO-92 123 Symbol ak g Applications • Motor control • Industri.

  MCR100-8G   MCR100-8G






Part Number MCR100-8R
Manufacturers Kexin
Logo Kexin
Description Silicon Controlled Rectifier
Datasheet MCR100-8G DatasheetMCR100-8R Datasheet (PDF)

SMD Type Silicon Controlled Rectifier MCR100 (KCR100) Thyristor ■ Features ● Current-IGT : 200 μA ● ITRMS : 0.8 A. ● VRRM/ VDRM : MCR100-6: 400 V MCR100-6R: 400 V MCR100-8: 600 V MCR100-8R: 600 V ● Operating and storage junction temperature range ● TJ,Tstg : -55℃ to +150℃ 1.70 0.1 0.42 0.1 0.46 0.1 ■ Electrical Characteristics Ta = 25℃ Parameter On State Voltage (Note.1) Gate Trigger Voltage Peak Repetitive forward and MCR100-6/6R rever seblocking voltage MCR100-8/8R Holding curr.

  MCR100-8G   MCR100-8G







Part Number MCR100-8A
Manufacturers Micro Electronics
Logo Micro Electronics
Description 0.8A SCR
Datasheet MCR100-8G DatasheetMCR100-8A Datasheet (PDF)

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  MCR100-8G   MCR100-8G







Part Number MCR100-8
Manufacturers LITE-ON
Logo LITE-ON
Description Sensitive Gate SCR
Datasheet MCR100-8G DatasheetMCR100-8 Datasheet (PDF)

LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other logic Circuits Blocking Voltage to 600 Volts On–State Current Rating of 0.25 Amperes RMS at 80℃ High Surge Current Capability — 9 Amperes Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design Immunity to dV/dt — 20 V/us Minimum at Tj=110℃ Glass-Passivated Surface for Reliability and Uniformity Autoclave test m.

  MCR100-8G   MCR100-8G







Part Number MCR100-8
Manufacturers INCHANGE
Logo INCHANGE
Description Thyristors
Datasheet MCR100-8G DatasheetMCR100-8 Datasheet (PDF)

isc Thyristors FEATURES ·With TO-92 package ·Sensitive gate trigger current ·Low reverse and forward blocking current ·Low holding current ·Designed for high volume, line-powered consumer applications such as relay and lamp drivers,small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN VDRM Repetitive peak off-state voltage 600 VRRM Repetitive peak off-state voltage 600 IT(RMS) RMS on-state c.

  MCR100-8G   MCR100-8G







SCRs

MCR100-8G SCRs Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Features • Blocking voltage to 600 V • On-state RMS current to 0.8 A • Ultra low gate trigger current Simplified outline TO-92 123 Symbol ak g Applications • Motor control • Industrial and domestic lighting • Heating • Static switching Pin 1 2 3 TAB Description cathode anode gate anode SYMBOL VDRM IT RMS ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current full sine wave Non-repetitive peak on-state current (full cycle,Tj initial=25 ) Value 600 0.8 10 Unit V A A SYMBOL R JC R JA TL PARAMETER Thermal resistance,Junction to Case Junction to Ambient Lead Solder Temperature CONDITIONS <1/16 from case,10 secs max MIN - TYP - 260 MAX 75.


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