DatasheetsPDF.com

MCR100-8 Datasheet

Part Number MCR100-8
Manufacturers Transys
Logo Transys
Description TO-92 Plastic-Encapsulated Transistors
Datasheet MCR100-8 DatasheetMCR100-8 Datasheet (PDF)

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors MCR 100- 6, - 8 Silicon Planar PNPN Thyristor TO-92 1. KATHODE FEATURES 2. GATE Current-IGT: ITRMS: VDRM: 200 0.8 MCR100-6: MCR100-8: µA A 400 V 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 3. ANODE ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) 123 Parameter Symbol Test conditions MIN MAX On state voltage * VTM ITM=1A 1.7 Gate trigger voltage Peak Repetitive.

  MCR100-8   MCR100-8






Part Number MCR100-8
Manufacturers Semtech
Logo Semtech
Description SCR
Datasheet MCR100-8 DatasheetMCR100-8 Datasheet (PDF)

MCR100-3 … MCR100-8 G A K TO-92 Plastic Package Weight approx. 0.18g MAXIMUM RATINGS (TJ=25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage, Note 1 (TJ=25 to 125°C, RGK=1KΩ) MCR100-3 MCR100-4 MCR100-5 MCR100-6 MCR100-7 MCR100-8 Forward Current RMS (All Conduction Angles) Peak Forward Surge Current, TA=25°C (1/2 Cycle, Sine Wave, 60Hz) Circuit Fusing (t=8.3ms) Peak Gate Power - Forward, TA=25°C Average Gate Power - Forward, TA=25°C Peak Gate Current - Forw.

  MCR100-8   MCR100-8







Part Number MCR100-8
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Sensitive Gate Silicon Controlled Rectifiers
Datasheet MCR100-8 DatasheetMCR100-8 Datasheet (PDF)

MCR100 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA package which is readily adaptable for use in automatic insertion equipment. Features http://onsemi.com SCRs 0.8 A RMS 100 thru 600 V G A K • Sensitive Gate Allows Tri.

  MCR100-8   MCR100-8







Part Number MCR100-8
Manufacturers Kexin
Logo Kexin
Description Silicon Controlled Rectifier
Datasheet MCR100-8 DatasheetMCR100-8 Datasheet (PDF)

SMD Type Silicon Controlled Rectifier MCR100 (KCR100) Thyristor ■ Features ● Current-IGT : 200 μA ● ITRMS : 0.8 A. ● VRRM/ VDRM : MCR100-6: 400 V MCR100-6R: 400 V MCR100-8: 600 V MCR100-8R: 600 V ● Operating and storage junction temperature range ● TJ,Tstg : -55℃ to +150℃ 1.70 0.1 0.42 0.1 0.46 0.1 ■ Electrical Characteristics Ta = 25℃ Parameter On State Voltage (Note.1) Gate Trigger Voltage Peak Repetitive forward and MCR100-6/6R rever seblocking voltage MCR100-8/8R Holding curr.

  MCR100-8   MCR100-8







Part Number MCR100-8
Manufacturers WEJ
Logo WEJ
Description Silicon Planar PNPN Thyristor
Datasheet MCR100-8 DatasheetMCR100-8 Datasheet (PDF)

.

  MCR100-8   MCR100-8







Part Number MCR100-8
Manufacturers LITE-ON
Logo LITE-ON
Description Sillicon Controlled Rectifiers
Datasheet MCR100-8 DatasheetMCR100-8 Datasheet (PDF)

LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other logic Circuits Blocking Voltage to 600 Volts On–State Current Rating of 0.25 Amperes RMS at 80℃ High Surge Current Capability — 9 Amperes Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design Immunity to dV/dt — 20 V/us Minimum at Tj=110℃ Glass-Passivated Surface for Reliability and Uniformity Autoclave test m.

  MCR100-8   MCR100-8







TO-92 Plastic-Encapsulated Transistors

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors MCR 100- 6, - 8 Silicon Planar PNPN Thyristor TO-92 1. KATHODE FEATURES 2. GATE Current-IGT: ITRMS: VDRM: 200 0.8 MCR100-6: MCR100-8: µA A 400 V 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 3. ANODE ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) 123 Parameter Symbol Test conditions MIN MAX On state voltage * VTM ITM=1A 1.7 Gate trigger voltage Peak Repetitive forward and reverse blocking voltage MCR100-6 MCR100-8 Peak forward or reverse blocking Current Holding current VGT VDRM AND VRRM IDRM IRRM IH VAK=7V 0.8 IDRM= 10 µA ,VMAX=1010 V VAK= Rated VDRM or VRRM IHL= 20 mA , Av = 7 V 400 600 10 5 A2 5 15 Gate trigger current A1 IGT A VAK=7V 15 30 30 80 UNIT V V V µA mA µA µA µA B 80 200 µA * Forward current applied for 1 ms maximum duration, duty cycle≤1%. Typical Characteristics MCR100-6,-8 .


2015-04-29 : BC846    BC847    BC848    BC849    BC850    PDTC144V    PDTC144VE    PDTC144VK    PDTC144VM    PDTC144VS   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)