MCR08B

MCR08B, MCR08M Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing. Features Sensitive Gate Trigger Current Blocking Voltage to 600 V Glass Passivated Surface for Reliability and Uniformity Surface Mount Package These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (Sine Wave, RGK = 1 kW TJ = 25 to 110°C) MCR08B MCR08M VDRM, VRRM 200 600 V On-State Current RMS (All Conduction Angles; TC = 80°C) IT(RMS) 0.8 A Peak Non-repetitive Surge Current ITSM 8.0 A (1/2 Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s Forward Peak Gate Power (TC = 80°C, t = 1.0 ms) Average Gate Power (TC = 80°C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Rating PGM 0.1 W PG(AV) 0.01 W TJ −40 to +110 °C Tstg −40 to +150 °C Symbol Value Unit Thermal Resistance, Junction−to−Ambient PCB Mounted per Figure 1 RqJA 156 °C/W Thermal Resistance, Junction−to−Tab Measured on Anode Tab Adjacent to Epoxy RqJT 25 °C/W Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) ...