MCP87130
High-Speed N-Channel Power MOSFET
Features:
• Low Drain-to-Source On Resistance (RDS(ON)) • Low Total Gate Cha...
MCP87130
High-Speed N-Channel Power
MOSFET
Features:
Low Drain-to-Source On Resistance (RDS(ON)) Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD) Low Series Gate Resistance (RG) Capable of Short Dead-Time Operation RoHS Compliant
Applications:
Point-of-Load DC-DC Converters High Efficiency Power Management in Servers,
Networking, and Automotive Applications
Description:
The MCP87130 is an N-Channel power
MOSFET in a popular PDFN 5 mm x 6 mm package as well as a PDFN 3.3 mm x 3.3 mm package. Advanced packaging and silicon processing technologies allow the MCP87130 to achieve a low QG for a given RDS(ON) value, resulting in a low Figure of Merit (FOM). Combined with low RG, the low FOM of the MCP87130 allows high efficiency power conversion with reduced switching and conduction losses.
Package Type
PDFN 5 x 6
PDFN 3.3 x 3.3
S1
8D
S 2 7D
S3
6D
G 4 5D
Product Summary Table: Unless otherwise indicated, TA = +25˚C.
Parameters
Sym. Min. Typ....
