MCP87090

MCP87090 High-Speed N-Channel Power MOSFET Features: Low Drain-to-Source On Resistance (RDS(ON)) Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) Low Series Gate Resistance (RG) Capable of Short Dead-Time Operation RoHS Compliant Applications: Point-of-Load DC-DC Converters High Efficiency Power Management in Servers, Networking, and Automotive Applications Description: The MCP87090 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package, as well as a PDFN 3.3 mm x 3.3 mm package. Advanced packaging and silicon processing technologies allow the MCP87090 to achieve a low QG for a given RDS(ON) value, resulting in a low Figure of Merit (FOM). Combined with low RG, the low FOM of the MCP87090 device allows high efficiency power conversion with reduced switching and conduction losses. Package Type PDFN 5 x 6 PDFN 3.3 x 3.3 S1 8D S2 7D S3 6D G4 5D Product Summary Table: Unless otherwise indicated, TA = +25˚C Parameters Sym. Min. Typ. Max. Units Conditions Operating Characteristics Drain-to-Source Breakdown Voltage Gate-to-Source Threshold Voltage Drain-to-Source On Resistance Total Gate Charge Gate-to-Drain Charge Series Gate Resistance BVDSS 25 — — VGS(TH) 1.1 1.35 1.7 RDS(ON) — — 10 12 8.5 10.5 QG — 7.5 10 QGD — 2.8 — RG — 1.8 — V VGS = 0V, ID = 250 µA V VDS = VGS, ID = 250 µA mΩ VGS = 4.5V, ID = 17A mΩ VGS = 10V, ID = 17A nC VDS = 12.5V, ID = 17A, VGS = 4.5V nC VDS = 12.5V, ID = 17A Ω Thermal Characteristics Therm...