MCP87018

MCP87018 High-Speed N-Channel Power MOSFET Features: Low Drain-to-Source On Resistance (RDS(ON)) Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) Low Series Gate Resistance (RG) Fast Switching Capable of Short Dead-Time Operation RoHS Compliant Applications: Point-of-Load DC-DC Converters High-Efficiency Power Management in Servers, Networking and Automotive Applications Package Type PDFN 5 x 6 Description: The MCP87018 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced packaging and silicon processing technologies allow the MCP87018 to achieve a low QG for a given RDS(on) value, resulting in a low Figure of Merit (FOM). Combined with low RG, the low FOM of the MCP87018 allows high-efficiency power conversion with reduced switching and conduction losses. S1 S2 S3 G4 8D 7D 6D 5D Product Summary Table: Unless otherwise indicated, TA = +25°C. Parameters Sym. Min. Typ. Max. Units Conditions Operating Characteristics Drain-to-Source Breakdown Voltage Gate-to-Source Threshold Voltage Drain-to-Source On Resistance Total Gate Charge Gate-to-Drain Charge Series Gate Resistance BVDSS 25 — — VGS(TH) 1 1.3 1.6 RDS(ON) — — 1.8 2.2 1.5 1.9 QG — 32.5 37 QGD — 13 — RG — 1.5 — V VGS = 0V, ID = 250 µA V VDS = VGS, ID = 250 µA mΩ VGS = 4.5V, ID = 25A mΩ VGS = 10V, ID = 25A nC VDS = 12.5V, ID = 25A, VGS = 4.5V nC VDS = 12.5V, ID = 25A Ω— Thermal Characteristics Thermal Resistance Junction-to-X RθJX — — 55 °C/W Note 1 T...