Freescale N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-220 save.
N-Channel 60-V (D-S) MOSFET
Freescale N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-220 saves board space Fast switching speed High performance trench technology
FQ P20N06/ MCP20N06
PRO DUCT SUM M A RY V ) rDS(on) m (Ω) DS (V 26.5 @ V G S = 10V 60 32.5 @ V G S = 4.5V
ID (A ) 87
a
D1 G1 S1 N-Channel MOSFET
ABSOLUTE MAX IMUM RATING S (TA = 25 C UNLESS OTHERW ISE NOTED) Sym bol Lim it Units Param eter VDS 60 Drain-Source Voltage V VGS ±20 G ate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
a b a o a o TC=25 C ID
o
87 240 90 300
IDM IS TC=25 C PD
A A W
o
Continuous Source Current (Diode Conduction)
Operating Junction and Storage Tem perature Range
TJ, Tstg -55 to 175
C
T H E RMA L RE SIST A NC E RA T ING S Param eter Sym bol
M axim umJunction-to-Am bient M axim umJunction-to-Case
a
Maxim um U nits
62.5 0.5
o o
RθJA RθJC
C/W C/W
Notes a. Package Limited b. Pulse width limited by maximum junction temperature
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1
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Freescale
FQ P20N06/ MCP20N06
SPECIFICATIONS (TA = 25oC UNLESS OTHERWI.