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MCH6306 Datasheet

Part Number MCH6306
Manufacturers Sanyo
Logo Sanyo
Description P-Channel Silicon MOSFET
Datasheet MCH6306 DatasheetMCH6306 Datasheet (PDF)

Ordering number : ENN7716 MCH6306 MCH6306 Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. P-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic b.

  MCH6306   MCH6306






Part Number MCH6307
Manufacturers Sanyo
Logo Sanyo
Description Ultrahigh-Speed Switching Applications
Datasheet MCH6306 DatasheetMCH6307 Datasheet (PDF)

Ordering number : ENN7080 MCH6307 P-Channel Silicon MOSFET MCH6307 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2193A [MCH6307] 0.25 0.3 0.15 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 4 2.1 1.6 5 6 0.25 3 2 0.65 2.0 0.07 1 6 5 4 0.85 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage D.

  MCH6306   MCH6306







Part Number MCH6305
Manufacturers Sanyo
Logo Sanyo
Description Ultrahigh-Speed Switching Applications
Datasheet MCH6306 DatasheetMCH6305 Datasheet (PDF)

Ordering number : ENN6943 MCH6305 P-Channel Silicon MOSFET MCH6305 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2193 [MCH6305] 0.25 0.3 0.15 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 6 5 4 1.6 2.1 1 0.25 2 3 0.65 2.0 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable.

  MCH6306   MCH6306







Part Number MCH6303
Manufacturers Sanyo
Logo Sanyo
Description Ultrahigh-Speed Switching Applications
Datasheet MCH6306 DatasheetMCH6303 Datasheet (PDF)

Ordering number : ENN6778 MCH6303 P-Channel Silicon MOSFET MCH6303 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2193 [MCH6303] 0.25 0.3 0.15 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 6 5 4 1.6 2.1 1 0.25 2 3 0.65 2.0 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS.

  MCH6306   MCH6306







Part Number MCH6302
Manufacturers Sanyo
Logo Sanyo
Description Ultrahigh-Speed Switching Applications
Datasheet MCH6306 DatasheetMCH6302 Datasheet (PDF)

Ordering number : ENN7132 MCH6302 P-Channel Silicon MOSFET MCH6302 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2193A [MCH6302] 0.25 0.3 4 5 6 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 2.1 1.6 0.25 3 2 0.65 2.0 0.07 1 6 5 4 (Bottom view) 0.85 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6 1 2 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gat.

  MCH6306   MCH6306







P-Channel Silicon MOSFET

Ordering number : ENN7716 MCH6306 MCH6306 Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. P-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Ratings --30 ±20 --4 --16 1.5 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : JF V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=±16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--2A ID=--2A, VGS=--10V ID=--1A, VGS=--4.5V ID=--1A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit min --30 --1.2 2.5 Ratings typ max Unit V --1 µA ±10 µA --2.6 V 3.6 S 53 69 mΩ 92 129 mΩ 105 147 mΩ .


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