MCH6123

Ordering number : ENA1291A MCH6123 Bipolar Transistor –50V, –3A, Low VCE(sat), PNP Single MCPH6 http://onsemi.com Applications DC-DC converter, relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current capacity Low collector-to-emitter saturation voltage High speed switching Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) High allowable power dissipation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature VCBO VCES VCEO VEBO IC ICP IB PC Tj Storage Temperature Tstg Conditions When mounted on ceramic substrate (600mm2×0.8mm) Ratings -50 -50 -50 -6 -3 -6 -600 1 150 -55 to +150 Unit V V V V A A mA W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7022A-007 2.0 654 0.15 MCH6123-TL-E Product & Package Information Package : MCPH6 JEITA, JEDEC : SC-88, SC-70-6, SOT-363 Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking 2.1 0.07 0.85 0.25 1.6 0.25 LOT No...