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MCH5541 Datasheet

Part Number MCH5541
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP/NPN Bipolar Transistor
Datasheet MCH5541 DatasheetMCH5541 Datasheet (PDF)

MCH5541 PNP/NPN Bipolar Transistor ()30V, ()700mA, VCE(sat) ; (220)190mV (max) Overview MCH5541 is ()30V, ()700mA, VCE(sat) ; (220)190mV (max), PNP/NPN 2 in 1 type MCPH5, Bipolar Transistor. Features  Composite type with a PNP / NPN transistor contained in one package, facilitating high-density mounting  Ultrasmall package permitting applied sets to be small and slim. Package : SC-88AFL / MCPH5 (2.0  1.6  0.85 mm) Typical Applications  MOSFET gate drivers  Relay drivers  Lamp dr.

  MCH5541   MCH5541






PNP/NPN Bipolar Transistor

MCH5541 PNP/NPN Bipolar Transistor ()30V, ()700mA, VCE(sat) ; (220)190mV (max) Overview MCH5541 is ()30V, ()700mA, VCE(sat) ; (220)190mV (max), PNP/NPN 2 in 1 type MCPH5, Bipolar Transistor. Features  Composite type with a PNP / NPN transistor contained in one package, facilitating high-density mounting  Ultrasmall package permitting applied sets to be small and slim. Package : SC-88AFL / MCPH5 (2.0  1.6  0.85 mm) Typical Applications  MOSFET gate drivers  Relay drivers  Lamp drivers  Motor drivers www.onsemi.com Electrical Connection 54 123 1 : Base1 2 : Emitter Common 3 : Base2 4 : Collector2 5 : Collector1 Top view ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. SPECIFICATIONS ( ) : PNP ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1) Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation VCBO VCEO VEBO IC ICP PC PW 10s Mounted on a ceramic board (600mm2 x 0.8m) (30) 40 (30) 30 () 5 () 700 () 3 0.5 V V V mA A W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2.


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