MCH5541
PNP/NPN Bipolar Transistor ()30V, ()700mA, VCE(sat) ; (220)190mV (max)
Overview
MCH5541 is ()30V, ()700mA, VCE(sat) ; (220)190mV (max), PNP/NPN 2 in 1 type MCPH5, Bipolar Transistor.
Features Composite type with a PNP / NPN transistor contained in one package,
facilitating high-density mounting Ultrasmall package permitting applied sets to be small and slim.
Package : SC-88AFL / MCPH5 (2.0 1.6 0.85 mm)
Typical Applications MOSFET gate drivers Relay drivers
Lamp dr.
PNP/NPN Bipolar Transistor
MCH5541
PNP/NPN Bipolar Transistor ()30V, ()700mA, VCE(sat) ; (220)190mV (max)
Overview
MCH5541 is ()30V, ()700mA, VCE(sat) ; (220)190mV (max), PNP/NPN 2 in 1 type MCPH5, Bipolar Transistor.
Features Composite type with a PNP / NPN transistor contained in one package,
facilitating high-density mounting Ultrasmall package permitting applied sets to be small and slim.
Package : SC-88AFL / MCPH5 (2.0 1.6 0.85 mm)
Typical Applications MOSFET gate drivers Relay drivers
Lamp drivers Motor drivers
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Electrical Connection
54 123
1 : Base1 2 : Emitter Common 3 : Base2 4 : Collector2 5 : Collector1
Top view
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
SPECIFICATIONS ( ) : PNP ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1)
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
VCBO VCEO VEBO
IC ICP PC
PW 10s Mounted on a ceramic board (600mm2 x 0.8m)
(30) 40 (30) 30
() 5 () 700
() 3 0.5
V V V mA A W
Junction Temperature
Tj
150 C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2.