MCH3333

MCH3333 Ordering number : ENN7989 MCH3333 Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. P-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) Ratings --30 ±10 --1.5 --6.0 0.9 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : YJ Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=±8V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--0.8A ID=--0.8A, VGS=--4V ID=--0.4A, VGS=--2.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. min --30 --0.4 1.38 Ratings typ max Unit V --1 µA ±10 µA --1.4 V 2.3 S 215 280 mΩ 290 410 mΩ 285 pF 52 pF 38 pF 10...