MCH3106

Ordering number : ENN6861A MCH3106 PNP Epitaxial Planar Silicon Transistor MCH3106 DC / DC Converter Applications Applications Package Dimensions unit : mm 2194A [MCH3106] 0.25 Relay drivers, lamp drivers, motor drivers, strobes. Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilicates miniaturization in end products (mounting height : 0.85mm). High allowable power dissipation. 0.3 3 0.15 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 1 : Base 2 : Emitter 3 : Collector Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board(600mm2!0.8mm) Conditions 0.85 1 2 (Top view) SANYO : MCPH3 Unit -15 -12 --5 --3 --5 --600 0.9 150 --55 to +150 V V V A A mA W °C °C Ratings Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Marking : AF Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Conditions VCB=-12V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=--500mA VCE=-2V, IC=--500mA VCB=-10V, f=1MHz IC=--1.5A, IB=--30mA IC=--...