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MC-458CB64ESB Datasheet

Part Number MC-458CB64ESB
Manufacturers NEC
Logo NEC
Description 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
Datasheet MC-458CB64ESB DatasheetMC-458CB64ESB Datasheet (PDF)

DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB64ESB, 458CB64PSB 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC-458CB64ESB and MC-458CB64PSB are 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled. These modules provide high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are.

  MC-458CB64ESB   MC-458CB64ESB






8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE

DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB64ESB, 458CB64PSB 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC-458CB64ESB and MC-458CB64PSB are 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled. These modules provide high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. Features • 8,388,608 words by 64 bits organization • Clock frequency and access time from CLK Part number MC-458CB64ESB-A10B /CAS Latency CL = 3 CL = 2 Clock frequency (MAX.) 100 MHz 67 MHz 100 MHz 67 MHz Access time from CLK (MIN.) 7 ns 8 ns 7 ns 8 ns 5 MC-458CB64PSB-A10B CL = 3 CL = 2 • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge • Pulsed interface • Possible to assert random column address in every cycle • Quad internal banks controlled by BA0 and BA1 (Bank Select) • Programmable burst-length (1, 2, 4, 8 and Full Page) • Programmable wrap sequence (Sequential / Interleave) • Programmable /CAS latency (2, 3) • Automatic precharge and controlled precharge • CBR (Auto) refresh and self refresh • Single +3.3 V ± 0.3 V power supply • LVTTL compatible • 4,096 refresh cycles/64 ms • Burst termination by Burst Stop command and Precharge command • 144-pin small outline dual in-line memory module .


2005-04-26 : D7088    MTW8N60E    MTW8N60E    MBR1550CT    MBR1560    MBR1560CT    MBR1560CT    MBR1560CT    MBR16100CT    MBR1620   


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