MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Epicap Diodes
Designed for general frequency control and tuning applicati...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Epicap Diodes
Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package
31
Cathode
Anode
SC–70/SOT–323
31
Cathode
Anode
SOT–23
21
Cathode
Anode
TO–92
MAXIMUM RATINGS
Rating
Symbol MBV109T1 MMBV109LT1 MV209 Unit
Reverse
Voltage Forward Current
VR IF
30 Vdc 200 mAdc
Forward Power Dissipation
@ TA = 25°C Derate above 25°C
PD
280 2.8
200 200 mW 2.0 1.6 mW/°C
Junction Temperature Storage Temperature Range
TJ Tstg
+125 –55 to +150
°C °C
DEVICE MARKING
MBV109T1 = J4A, MMBV109LT1 = M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Reverse Breakdown
Voltage (IR = 10 µAdc)
Reverse
Voltage Leakage Current (VR = 25 Vdc)
Diode C...