MBT35200MT1

MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications A Device of the mX™ Family http://onsemi.com 35 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Collector Current — Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max –35 –55 –5.0 –2.0 –5.0 Unit Vdc Vdc Vdc Adc A 4 EMITTER 3 BASE COLLECTOR 1, 2, 5, 6 HBM Class 3 MM Class C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead #1 Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 X 1.0 inch Pad 3. ref: Figure 9 Symbol PD (Note 1.) Max 625 5.0 RθJA (Note 1.) PD (Note 2.) 200 1.0 8.0 RθJA (Note 2.) RθJL PDsingle (Notes 2. & 3.) TJ, Tstg 120 80 1.75 –55 to +150 Unit mW mW/°C °C/W W mW/°C °C/W °C/W 4 5 6 3 2 1 CASE 318G TSOP STYLE 6 DEVICE MARKING G4 (date code) W °C ORDERING INFORMATION Device MBT35200MT1 Package Case 318G Shipping 3000/Tape & Reel © Semiconductor Components Industries, LLC, 2000 1 August, 2000 – Rev. 1 Publication Order Number: MBT35200MT1/D MBT35200MT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Character...