MBRS340

MBRS340 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters. This device offers a low forward voltage performance in a power surface mount package in applications where size and weight are critical. Features: DISCRETE POWER AND SIGNAL TECHNOLOGIES Compact surface mount package with J-bend leads (SMC). 3.0 Watt Power Dissipation package. 3.0 Ampere, forward voltage less than 525 mv Ordering: 13 inch reel (330 mm); 16 mm Tape; 3,000 units per reel. Absolute Maximum Ratings* Parameter Storage Temperature Maximum Junction Temperature TA = 25OC unless otherwise noted Value -65 to +150 -65 to +125 40 3.0 4.0 80 11 Units O O C C Repetitive Peak Reverse Voltage (VRRM) Average Rectified Forward Current (TL = 100OC) (TL = 90OC) Surge Non Repetitive Forward Current (Half wave, single phase, 60 Hz) Junction to Case for Thermal Resistance (RØJL) SMC Package (DO-214AB) V A A A O C/W *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired Top Mark: B34 1 2 Electrical Characteristics SYM IR VF TA = 25OC unless otherwise noted Actual Size CHARACTERISTICS Reverse Leakage Current PW 300 us, <2% Duty Cycle Forward Voltage PW 300 us, <2% Duty Cycle MIN MAX 2.0 20 525 UNITS mA mA mV TEST CONDITIONS VR = 40 V; Tj = 25OC VR = 40 V; Tj = 100OC...