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MBRS3150G Datasheet

Part Number MBRS3150G
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description 3.0A Surface Mount Schottky Barrier Rectifiers
Datasheet MBRS3150G DatasheetMBRS3150G Datasheet (PDF)

Chip Schottky Barrier Rectifier MBRS320G THRU MBRS3200G 3.0A Surface Mount Schottky Barrier Rectifiers -20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • S.

  MBRS3150G   MBRS3150G






3.0A Surface Mount Schottky Barrier Rectifiers

Chip Schottky Barrier Rectifier MBRS320G THRU MBRS3200G 3.0A Surface Mount Schottky Barrier Rectifiers -20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500/228 • Suffix "-H" indicates Halogen free parts, ex. MBRS320G-H. Mechanical data • Epoxy: UL94-V0 rated frame retardant • Case: Molded plastic, DO-214AB / SMC • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: lndicated by cathode band • Mounting Position: Any • Weight: Approximated 0.19 gram Package outline SMC 0.272(6.9) 0.248(6.3) 0.012(0.3) Typ. 0.189(4.8) 0.165(4.2) 0.048(1.2) Typ. 0.098(2.5) 0.075(1.9) 0.048 (1.2) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current See Fig.1 CONDITIONS Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient f=1MHz and applied 4V DC reve.


2014-11-12 : MBR0520G    MBR0530G    MBR0540G    MBRS120G    MBRS130G    MBRS140G    MBRS150G    MBRS160G    MBRS180G    MBRS1100G   


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