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MBRS260T3G Datasheet

Part Number MBRS260T3G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Surface Mount Schottky Power Rectifier
Datasheet MBRS260T3G DatasheetMBRS260T3G Datasheet (PDF)

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • Compact Package with J−Bend Leads Ideal for Automated Handling • Highly S.

  MBRS260T3G   MBRS260T3G






Part Number MBRS260T3
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Surface Mount Schottky Power Rectifier
Datasheet MBRS260T3G DatasheetMBRS260T3 Datasheet (PDF)

MBRS260T3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. http://onsemi.com • • • • • • • • • • • • • Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Ox.

  MBRS260T3G   MBRS260T3G







Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • Compact Package with J−Bend Leads Ideal for Automated Handling • Highly Stable Oxide Passivated Junction • Guard−Ring for Over−Voltage Protection • Low Forward Voltage Drop • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • These are Pb−Free Devices Mechanical Characteristics • Case: Molded Epoxy • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 95 mg (Approximately) • Cathode Polarity Band • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B www.onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS SMB CASE 403A MARKING DIAGRAM AYWW B26G G B26 = Specific Device Code A = Assembly Location** Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stam.


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