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MBRS250G

American First Semiconductor

(MBRS220G - MBRS2100G) 2.0A Surface Mount Schottky Barrier Rectifiers

Chip Schottky Barrier Rectifier MBRS220G THRU MBRS2100G 2.0A Surface Mount Schottky Barrier Rectifiers -20V-200V Featu...


American First Semiconductor

MBRS250G

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Description
Chip Schottky Barrier Rectifier MBRS220G THRU MBRS2100G 2.0A Surface Mount Schottky Barrier Rectifiers -20V-200V Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of MIL-STD-19500/228 Suffix "-H" indicates Halogen-free parts, ex. MBRS220G-H. Mechanical data Epoxy: UL94-V0 rated frame retardant Case: Molded plastic, DO-214AC / SMA Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: lndicated by cathode band Mounting Position: Any Weight: Approximated 0.05 gram Package outline SMA 0.196(4.9) 0.180(4.5) 0.012(0.3) Typ. 0.106(2.7) 0.091(2.3) 0.032(0.8) Typ. 0.068(1.7) 0.060(1.5) 0.032 (0.8) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT T A=25oC unless otherwise noted) PARAMETER Forward rectified current See Fig.1 CONDITIONS Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient Junction to case f=1MHz and ...




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