DatasheetsPDF.com

MBRP20060CT

ON Semiconductor

POWERTAP II SWITCHMODE Power Rectifier

www.DataSheet4U.com MBRP20060CT Preferred Device POWERTAPt II SWITCHMODEt Power Rectifier These state−of−the−art devic...


ON Semiconductor

MBRP20060CT

File Download Download MBRP20060CT Datasheet


Description
www.DataSheet4U.com MBRP20060CT Preferred Device POWERTAPt II SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com Dual Diode Construction − May Be Paralleled for Higher Current Output Guardring for Stress Protection Low Forward Voltage 150°C Operating Junction Temperature Pb−Free Package is Available* SCHOTTKY BARRIER RECTIFIER 200 AMPERES, 60 VOLTS 1 3 2 Mechanical Characteristics: Case: Epoxy, Molded with metal heatsink base Weight: 80 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant Top Terminal Torque: 25−40 lb−in max Base Plate Torques: See procedure given in the Package Outline Section 2 1 POWERTAP II CASE 357C PLASTIC MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 140°C) Per Leg Per Device Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 140°C) Per Leg Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz) Per Leg Storage Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) Value 60 Unit V 3 A 100 200 A 200 MARKING DIAGRAM IFRM MCC AYYWWG B20060T IFSM 1500 A B20060T MCC A YY WW G = Specific Device Code = Mold Compound Code = Assembl...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)